Block Diagram Programming of Quantum Dot Sources and Infrared Photodetectors for Gamma Radiation Detection Through VisSim
نویسندگان
چکیده
Quantum dots (QDs) have attracted tremendous interest over the last few years for a large variety of applications ranging from optoelectronic through photocatalytic to biomedical, including applications as nanophosphors in light emitting diodes LEDs [1]. QDs have been suggested as scintillators for detection of alpha particles and gamma-rays [1-4]. Quantum dots offer an improvement on scintillator technology in that the size of the phosphorescent material would not be restrained by crystal growth. The dots would be suspended in a transparent matrix that could be as large as desired. Moreover, the output of the QDs is a function of their dimensions. Therefore, they could be produced to emit light at wavelengths suitable for detection by avalanche photodiodes. That offer higher quantum efficiencies than photomultiplier tubes. Therefore, the sensitivity of the scintillator detector is increased [5]. To our knowledge, still models describing QD sources as gamma detection are not devised yet. In this chapter, we report on the effects of gamma irradiation on the different properties of CdSe/ZnS QDs. These characteristics are optical gain, power, population inversion and photon density. Furthermore, a new semiconductor scintillator detector was studied in which high-energy gamma radiation produces electron-hole pairs in a direct-gap semiconductor material that subsequently undergo interband recombination, producing infrared light to be registered by a photo-detector [6]. Therefore, quantum dot infrared photodetectors (QDIPs) can be used for this purpose. This chapter presents a method to evaluate, study, and improve the performance of quantum dot sources and infrared photodetectors as gamma radiation detection. This chapter is organized as follows: Section 3.2 presents the basics of VisSim simulator. QD devices as a detector are illustrated in Section 3.3. The proposed models of both quantum dot devices are represented in Section 3.4. Discussion and results are summarized in Section 3.5.
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